IEDM 2018 Image Sensor Papers

IEDM 2018 to be held on Dec. 1-5 in San Francisco publishes a list of accepted papers with an interesting image sensor stuff:

• High Performance 2.5um Global Shutter Pixel with New Designed Light-Pipe Structure
  Toshifumi Yokoyama, TowerJazz Panasonic Semiconductor Co.
• Back-Illuminated 2.74 μm-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving 10k e- Saturation Signal
  Yoshimichi Kumagai, Sony Semiconductor
• A 0.68e-rms Random-Noise 121dB Dynamic-Range Sub-pixel architecture CMOS Image Sensor with LED Flicker Mitigation
  Satoko Iida, Sony Semiconductor
• A 24.3Me- Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging
  Maasa Murata, Tohoku University
• A HDR 98dB 3.2µm Charge Domain Global Shutter CMOS Image Sensor
  Arnaud Tournier, STMicroelectronics
• 1.5µm dual conversion gain, backside illuminated image sensor using stacked pixel level connections with 13ke- full-well capacitance and 0.8e- noise
  Vincent Venezia, Omnivision
• Through-silicon-trench in back-side-illuminated CMOS image sensors for the improvement of gate oxide long term performance
  Andrea Vici, La Sapienza University of Rome
• High-Performance Germanium-on-Silicon Lock-in Pixels for Indirect Time-of-Flight Applications
  Neil Na, Artilux Inc.
• High Voltage Generation Using Deep Trench Isolated Photodiodes in a Back Side Illuminated Process
  Filip Kaklin, The University of Edinburgh
• CMOS-Integrated Single-Photon-Counting X-Ray Detector using an Amorphous-Selenium Photoconductor with 11×11-μm2 Pixels
  Ahmet Camlica, University of Waterloo