AZO Materials publishes Teledyne e2v article "
The Development of CMOS Image Sensors" with a table comparing CCD and CMOS sensors. Although I do not agree with some of the statements in the table, here it is:
| Characteristic | CCD | CMOS |
|---|
| Signal from pixel | Electron packet | Voltage |
| Signal from chip | Analog Voltage | Bits (digital) |
| Readout noise | low | Lower at equivalent frame rate |
| Fill factor | High | Moderate or low |
| Photo-Response | Moderate to high | Moderate to high |
| Sensitivity | High | Higher |
| Dynamic Range | High | Moderate to high |
| Uniformity | High | Slightly Lower |
| Power consumption | Moderate to high | Low to moderate |
| Shuttering | Fast, efficient | Fast, efficient |
| Speed | Moderate to High | Higher |
| Windowing | Limited | Multiple |
| Anti-blooming | High to none | High, always |
| Image Artefact | Smearing, charge transfer inefficiency | FPN, Motion (ERS), PLS |
| Biasing and Clocking | Multiple, higher voltage | Single, low-voltage |
| System Complexity | High | Low |
| Sensor Complexity | Low | High |
| Relative R&D cost | Lower | Lower or Higher depending on series |
